Samsung Electronics announced today that it has started shipping production volumes of two different 32-Gbit MLC NAND Flash devices based on 30nm lithography. Two 3-bit MLC (multi-level cell)  memory devices will initially be packaged with a 3-bit NAND Flash controller chip in 8-Gbyte microSD cards. The other new NAND Flash devices are MLC NAND Flash memories that have asynchronous DDR (double data rate) interfaces with 133-Mbits/second, transfer rates. These chips replace single data rate (SDR) MLC NAND Flash memory with a slower overall read performance of 40 Mbits/sec.

These announcements underscore the industry trend of designing the most leading-edge NAND Flash devices for the largest-volume (consumer-grade) applications. Other applications that are based on NAND Flash memory such as AgigA Tech’s AGIGARAM bulletproof server RAM can take advantage of these semiconductor developments by riding the same high-volume consumer learning curve. Otherwise, such leverage would not be available at current enterprise-class manufacturing volumes for NAND Flash chips.